? semiconductor components industries, llc, 2005 august, 2005 ? rev. 3 1 publication order number: NTP4302/d NTP4302, ntb4302 power mosfet 74 amps, 30 volts n?channel to?220 & d 2 pak features ? low r ds(on) ? higher efficiency extending battery life ? diode exhibits high speed, soft recovery ? avalanche energy specified ? i dss specified at elevated temperature ? pb?free packages are available typical applications ? dc?dc converters ? low voltage motor control ? power management in portable and battery powered products: ie: computers, printers, cellular and cordless telephones, and pcmcia cards maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 30 vdc drain?to?gate voltage (r gs = 10 m ) v dgr 30 vdc gate?to?source voltage ? continuous v gs 20 vdc drain current ? continuous @ t c = 25 c ? continuous @ t c = 100 c ? single pulse (t p 10 s) i d i d i dm 74 47 175 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 80 0.66 w w/ c operating and storage temperature range t j , t stg ?55 to +150 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 30 vdc, v gs = 10 vdc, l = 5.0 mh i l(pk) = 17 a, v ds = 30 vdc, r g = 25 ) e as 722 mj thermal resistance ? junction?to?case ? junction?to?ambient (note 1) r jc r ja 1.55 70 c/w maximum lead temperature for soldering purposes, 1/8 in from case for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using minimum recommended pad size, (cu area 0.412 in 2 ). 2. current limited by internal lead wires. to?220ab case 221a style 5 1 2 3 4 n?channel d s g marking diagrams & pin assignments 1 2 3 4 d 2 pak case 418aa style 2 http://onsemi.com v dss r ds(on) max i d max 30 v 9.3 m @ 10 v 74 a ordering information see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ntx4302 = device code x = b or p a = assembly location y = year ww = work week g = pb?free package ntx4302g ayww 1 gate 3 source 4 drain 2 drain ntx4302g ayww 1 gate 3 sourc e 4 drain 2 drain
NTP4302, ntb4302 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 3) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 30 ? ? 25 ? ? vdc mv/ c zero gate voltage drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 30 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 10 adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 3) gate threshold voltage (note 3) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.9 ?3.8 3.0 ? vdc mv/ c static drain?to?source on?resistance (note 3) (v gs = 10 vdc, i d = 37 adc) (v gs = 10 vdc, i d = 20 adc) (v gs = 4.5 vdc, i d = 10 adc) r ds(on) ? 6.8 6.8 9.5 9.3 9.3 12.5 m forward transconductance (note 3) (v ds = 10 vdc, i d = 20 adc) g fs ? 40 ? mhos dynamic characteristics input capacitance (v ds = 24 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 2050 2400 pf output capacitance c oss ? 640 800 transfer capacitance c rss ? 225 310 switching characteristics (note 4) turn?on delay time (v dd = 24 vdc, i d = 20 adc, v gs = 10 vdc, r g = 2.5 ) (note 3) t d(on) ? 10 18 ns rise time t r ? 22 35 turn?off delay time t d(off) ? 45 75 fall time t f ? 35 70 turn?on delay time (v dd = 24 vdc, i d = 10 adc, v gs = 4.5 vdc, r g = 2.5 ) (note 3) t d(on) ? 18 ? ns rise time t r ? 70 ? turn?off delay time t d(off) ? 32 ? fall time t f ? 30 ? gate charge (v ds = 24 vdc, i d = 37 adc, v gs = 4.5 vdc) (note 3) q t ? 28 ? nc q gs ? 7.5 ? q gd ? 19 ? source?drain diode characteristics forward on?voltage (i s = 20 adc, v gs = 0 vdc) (note 3) (i s = 20 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? 0.90 0.75 1.3 ? vdc reverse recovery time (i s = 20 adc, v gs = 0 vdc, di s /dt = 100 a/ s) (note 3) t rr ? 37 ? ns t a ? 21 ? t b ? 16 ? reverse recovery stored charge q rr ? 0.035 ? c 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTP4302, ntb4302 http://onsemi.com 3 0 2.5 30 2 1 i d , drain current (amps) 0 v gs , gate?to?source voltage (volts) i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) 70 v ds , drain?to?source voltage (volts) 10 20 40 50 60 3 r ds(on) , drain?to?source resistance ( ) 1.4 1.2 1 0.6 100 1 1000 10000 figure 1. on?region characteristics figure 2. transfer characteristics 04 2610 figure 3. on?resistance versus gate?to?source voltage v gs , gate?to?source voltage (volts) figure 4. on?resistance versus drain current and gate voltage i d , drain current (amps) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current versus voltage v ds , drain?to?source voltage (volts) i dss , leakage (na) ?50 50 25 0 ?25 75 100 26 02025 15 10 30 40 20 0 60 10 30 50 345 r ds(on) , drain?to?source resistance (normalized) 0.8 150 125 0.04 0 0.06 0.08 i d = 20 a t j = 25 c i d = 20 a v gs = 10 v t j = 25 c t j = ?55 c t j = 100 c t j = 100 c t j = 150 c v gs = 0 v t j = 25 c v gs = 4.5 v v gs = 10 v 4.6 v 7 v 0.02 80 30 20 10 40 7 0 0.01 0 0.015 0.005 50 60 1.6 0.5 1.5 v gs = 10 v 10 v ds 10 v 5 v 4.4 v t j = 25 c 4 v 3.8 v 3.4 v 3.2 v 3 v 2.8 v
NTP4302, ntb4302 http://onsemi.com 4 1000 100 10 1 0 100 400 600 700 800 2 4 1 3 0 5 10 10 3000 0 c, capacitance (pf) 0 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage versus total charge v gs , gate?to?source voltage (volts ) 1 1000 10 100 1 100 figure 9. resistive switching time variations versus gate resistance r g , gate resistance ( ) figure 10. diode forward voltage versus current v sd , source?to?drain voltage (volts) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse drain?to?source avalanche energy (mj) 0.1 10 1 100 010 30 0.5 0.7 0.6 0.8 15 5 10 0 25 25 125 100 75 50 15 0 gate?to?source or drain?to?source (volts) 1000 2000 4000 6000 30 i s , source current (amps) 20 20 0.9 r ds(on) limit thermal limit package limit v gs i d = 37 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 20 v single pulse t c = 25 c v dd = 24 v i d = 20 a v gs = 10 v v gs = 0 v t j = 25 c i d = 17 a 10 ms 1 ms 100 s 10 s dc t f t d(off) t d(on) t r v ds q 2 q 1 q t 1 10 5000 v ds 20 mounted on 2 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided) with one die operating, 10 s max. 200 300 500 v ds , drain?to?source voltage (volt s) 30 24 18 12 6
NTP4302, ntb4302 http://onsemi.com 5 safe operating area di/dt t rr t a t p i s 0.25 i s time i s t b figure 13. thermal response figure 14. diode reverse recovery waveform r(t), normalized effective transient thermal resistance r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t, time (s) 1.00 0.10 0.01 0.2 d = 0.5 0.05 0.01 single pulse 0.1 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.02 ordering information device package shipping ? NTP4302 to?220ab 50 units / rail NTP4302g to?220ab (pb?free) 50 units / rail ntb4302 d 2 pak 50 units / rail ntb4302g d 2 pak (pb?free) 50 units / rail ntb4302t4 d 2 pak 800 / tape & reel ntb4302t4g d 2 pak (pb?free) 800 / tape & reel ?for information on tape and reel specifications,including part orientation and tape sizes, please refer to our tape and reel p ackaging specifications brochure, brd8011/d.
NTP4302, ntb4302 http://onsemi.com 6 package dimensions d 2 pak case 418aa?01 issue o style 2: pin 1. gate 2. drain 3. source 4. drain seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.036 0.51 0.92 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f 0.310 ??? 7.87 ??? m 0.280 ??? 7.11 ??? m f m f m f variable configuration zone u view w?w view w?w view w?w 123 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1
NTP4302, ntb4302 http://onsemi.com 7 package dimensions to?220 case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 5: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTP4302/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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